Graphene on silicon carbide as a basis for gas- and biosensor applications

S. P. Lebedev, V. Yu Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Guschina, M. S. Dunaevskiy, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu N. Makarov

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Abstract

The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO2 on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin-fluorescein conjugate with concentration on the order of 1 ng/mL were determined.
Original languageEnglish
Pages (from-to)95-97
JournalNanosystems: Physics, Chemistry, Mathematics
Volume9
Issue number1
DOIs
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • graphene
  • silicon carbide
  • thermal decomposition
  • Raman spectroscopy
  • AFM
  • XPS
  • ARPES

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