Gigahertz Single-Electron Pumping Mediated by Parasitic States

Alessandro Rossi; Jevgeny Klochan; Janis Timoshenko; Fay E. Hudson; Mikko Möttönen; Sven Rogge; Andrew S. Dzurak; Vyacheslavs Kashcheyevs; Giuseppe C. Tettamanzi

doi:10.1021/acs.nanolett.8b00874

Gigahertz Single-Electron Pumping Mediated by Parasitic States

Alessandro Rossi^*, Jevgeny Klochan, Janis Timoshenko, Fay E. Hudson, Mikko Möttönen, Sven Rogge, Andrew S. Dzurak, Vyacheslavs Kashcheyevs, Giuseppe C. Tettamanzi

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.

Original language	English
Pages (from-to)	4141-4147
Number of pages	7
Journal	Nano Letters
Volume	18
Issue number	7
DOIs	https://doi.org/10.1021/acs.nanolett.8b00874
Publication status	Published - 11 Jul 2018
MoE publication type	A1 Journal article-refereed

Funding

The authors thank R. Zhao, J. van der Heijden, and L. Fricke for useful discussions. A.R. acknowledges support from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 654712 (SINHOPSI). This work was also financially supported by the Australian National Fabrication Facility for device fabrication. J.K. and V.K. acknowledge support from University of Latvia Grant AAP2016/B031. A.S.D. acknowledges support from the Australian Research Council (DP160104923 and CE11E0001017), the U.S. Army Research Office (W911NF-13-1-0024) and the Commonwealth Bank of Australia. M.M. acknowledges funding from the Academy of Finland through its Centres of Excellence Program (Project No. 312300). G.C.T. acknowledges financial support from the ARC-Discovery Early Career Scheme Award (Single Atom Based Quantum Metrology - DE120100702) for the development of the setup used in these experiments. This work has received funding from the European Metrology Programme for Innovation and Research (EMPIR, 15SIB08 e-SI-Amp) cofinanced by the Participating States and from the European Union’s Horizon 2020 research and innovation programme.

Keywords

Quantum dot
quantum electrical metrology
silicon
single-electron pump

Access to Document

10.1021/acs.nanolett.8b00874

https://strathprints.strath.ac.uk/68704/1/Rossi_etal_NL_2018_Gigahertz_single_electron_pumping_mediated_by_parasitic.pdf

Cite this

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abstract = "In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.",

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AU - Klochan, Jevgeny

AU - Timoshenko, Janis

AU - Hudson, Fay E.

AU - Möttönen, Mikko

AU - Rogge, Sven

AU - Dzurak, Andrew S.

AU - Kashcheyevs, Vyacheslavs

AU - Tettamanzi, Giuseppe C.

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Gigahertz Single-Electron Pumping Mediated by Parasitic States

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