Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes

Q. Qin, L. Akaslompolo, L. Yao, S. Majumdar, J. Vijayakumar, Binbin Chen, S. Van Dijken

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
ISBN (Electronic)9781479973224
Publication statusPublished - 14 Jul 2015
MoE publication typeA4 Conference publication
EventIEEE International Magnetics Conference - Beijing, China
Duration: 11 May 201515 May 2015


ConferenceIEEE International Magnetics Conference
Abbreviated titleINTERMAG


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