Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices . Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides . Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.
|Title of host publication||2015 IEEE International Magnetics Conference, INTERMAG 2015|
|Publication status||Published - 14 Jul 2015|
|MoE publication type||A4 Article in a conference publication|
|Event||IEEE International Magnetics Conference - Beijing, China|
Duration: 11 May 2015 → 15 May 2015
|Conference||IEEE International Magnetics Conference|
|Period||11/05/2015 → 15/05/2015|