Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes

Q. Qin; L. Akaslompolo; L. Yao; S. Majumdar; J. Vijayakumar; Binbin Chen; S. Van Dijken

doi:10.1109/INTMAG.2015.7157352

Giant resistive switching effects in symmetric all-oxide tunnel junctions with La_2/3Sr_1/3MnO₃ electrodes

Q. Qin, L. Akaslompolo, L. Yao, S. Majumdar, J. Vijayakumar, Binbin Chen, S. Van Dijken

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La_2/3Sr_1/3M-nO₃ (LSMO) electrodes separated by a ferroelectric PbZr_0.2Ti_0.8O₃ (PZT) or BaTiO₃ (BTO) tunnel barrier, or a paraelectric SrTiO₃ (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm², 30 × 60 μm², and 40 × 80 μm². Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	IEEE
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157352
Publication status	Published - 14 Jul 2015
MoE publication type	A4 Conference publication
Event	IEEE International Magnetics Conference - Beijing, China Duration: 11 May 2015 → 15 May 2015

Conference

Conference	IEEE International Magnetics Conference
Abbreviated title	INTERMAG
Country/Territory	China
City	Beijing
Period	11/05/2015 → 15/05/2015

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10.1109/INTMAG.2015.7157352

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@inproceedings{dfe0e4c04b2d441eacd64720cdd2d1dd,

title = "Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes",

abstract = "Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.",

author = "Q. Qin and L. Akaslompolo and L. Yao and S. Majumdar and J. Vijayakumar and Binbin Chen and {Van Dijken}, S.",

year = "2015",

month = jul,

day = "14",

doi = "10.1109/INTMAG.2015.7157352",

language = "English",

booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "IEEE",

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note = "IEEE International Magnetics Conference, INTERMAG ; Conference date: 11-05-2015 Through 15-05-2015",

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Qin, Q, Akaslompolo, L, Yao, L, Majumdar, S, Vijayakumar, J, Chen, B & Van Dijken, S 2015, Giant resistive switching effects in symmetric all-oxide tunnel junctions with La_2/3Sr_1/3MnO₃ electrodes. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157352, IEEE, IEEE International Magnetics Conference, Beijing, China, 11/05/2015. https://doi.org/10.1109/INTMAG.2015.7157352

TY - GEN

T1 - Giant resistive switching effects in symmetric all-oxide tunnel junctions with La2/3Sr1/3MnO3 electrodes

AU - Qin, Q.

AU - Akaslompolo, L.

AU - Yao, L.

AU - Majumdar, S.

AU - Vijayakumar, J.

AU - Chen, Binbin

AU - Van Dijken, S.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.

AB - Ferroelectric tunnel junctions have opened up promising routes towards energy-efficient data storage applications and memristive devices [1]. Polarization reversal in a ferroelectric tunnel barrier can change the electrical resistance of a junction, a phenomenon known as tunneling electroresistance (TER). On the other hand, redox-based effects such as the migration of oxygen vacancies can cause large resistive switching in transition metal oxides [2]. Here, we demonstrate nearly identical switching behavior in nominally symmetric tunnel junctions that are comprised of two La2/3Sr1/3M-nO3 (LSMO) electrodes separated by a ferroelectric PbZr0.2Ti0.8O3 (PZT) or BaTiO3 (BTO) tunnel barrier, or a paraelectric SrTiO3 (STO) tunnel barrier. The tunnel junctions were grown by pulsed laser deposition and patterned into solid junctions with a lateral dimension of 20 × 40 μm2, 30 × 60 μm2, and 40 × 80 μm2. Moreover, LSMO/PZT and LSMO/BTO bilayer were patterned into Hall bar structures for in-plane electric transport measurements inside a scanning probe microscope.

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U2 - 10.1109/INTMAG.2015.7157352

DO - 10.1109/INTMAG.2015.7157352

M3 - Conference article in proceedings

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - IEEE

T2 - IEEE International Magnetics Conference

Y2 - 11 May 2015 through 15 May 2015

ER -

Giant resistive switching effects in symmetric all-oxide tunnel junctions with La_2/3Sr_1/3MnO₃ electrodes

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