Gettering in silicon-on-insulator wafers with polysilicon layer

Research output: Contribution to journalArticleScientificpeer-review


Research units


Original languageEnglish
Pages (from-to)259-263
JournalMaterials Science and Engineering B
Issue numberC
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • Buried oxides, Device layers, Dissolved irons, Front surfaces, Gettering; Iron gettering, Polysilicon layers; Precipitation, Processing conditions, Segregation, Silicon-on-insulator, Silicon-on-insulator wafers, Soi wafers

ID: 3412785