Gettering in silicon-on-insulator wafers with polysilicon layer

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Original languageEnglish
Pages (from-to)259-263
JournalMaterials Science and Engineering B
Volume159-160
Issue numberC
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • Buried oxides, Device layers, Dissolved irons, Front surfaces, Gettering; Iron gettering, Polysilicon layers; Precipitation, Processing conditions, Segregation, Silicon-on-insulator, Silicon-on-insulator wafers, Soi wafers

ID: 3412785