Gettering in silicon-on-insulator wafers with polysilicon layer

Hele Savin, Marko Yli-Koski, Antti Haarahiltunen, Ville Virkkala, Heli Talvitie, M. I. Asghar, Juha Sinkkonen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)259-263
    JournalMaterials Science and Engineering B
    Issue numberC
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed


    • Buried oxides
    • Device layers
    • Dissolved irons
    • Front surfaces
    • Gettering; Iron gettering
    • Polysilicon layers; Precipitation
    • Processing conditions
    • Segregation
    • Silicon-on-insulator
    • Silicon-on-insulator wafers
    • Soi wafers

    Cite this