Gas-source molecular beam epitaxy of lattice-matched Ga_(x)In_(1-x)As_(y)P_(1-y) on GaAs over the entire composition range

G. Zhang, M. Pessa, K. Hjelt, H. Collan, T. Tuomi

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{faac5c5e21fd4b80af198186b1affccf,

title = "Gas-source molecular beam epitaxy of lattice-matched Ga_(x)In_(1-x)As_(y)P_(1-y) on GaAs over the entire composition range",

keywords = "GaInAsP, molecular beam epitaxy, GaInAsP, molecular beam epitaxy, GaInAsP, molecular beam epitaxy",

author = "G. Zhang and M. Pessa and K. Hjelt and H. Collan and T. Tuomi",

year = "1995",

language = "English",

volume = "150",

pages = "607--611",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Gas-source molecular beam epitaxy of lattice-matched Ga_(x)In_(1-x)As_(y)P_(1-y) on GaAs over the entire composition range

AU - Zhang, G.

AU - Pessa, M.

AU - Hjelt, K.

AU - Collan, H.

AU - Tuomi, T.

PY - 1995

Y1 - 1995

KW - GaInAsP

KW - molecular beam epitaxy

KW - GaInAsP

KW - molecular beam epitaxy

KW - GaInAsP

KW - molecular beam epitaxy

M3 - Article

VL - 150

SP - 607

EP - 611

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -