GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

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GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy. / Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri.

In: Journal of Crystal Growth, Vol. 234, No. 4, 02.2002, p. 631-636.

Research output: Contribution to journalArticleScientificpeer-review

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@article{4ee4e4ad07284227bab8a6c31695c04a,
title = "GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy",
keywords = "semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography",
author = "Teppo Hakkarainen and Juha Toivonen and Markku Sopanen and Harri Lipsanen",
year = "2002",
month = "2",
doi = "10.1016/S0022-0248(01)01750-X",
language = "English",
volume = "234",
pages = "631--636",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "4",

}

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TY - JOUR

T1 - GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

AU - Hakkarainen, Teppo

AU - Toivonen, Juha

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2002/2

Y1 - 2002/2

KW - semiconductors

KW - synchrotron X-ray topography

KW - semiconductors

KW - synchrotron X-ray topography

KW - semiconductors

KW - synchrotron X-ray topography

U2 - 10.1016/S0022-0248(01)01750-X

DO - 10.1016/S0022-0248(01)01750-X

M3 - Article

VL - 234

SP - 631

EP - 636

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 4

ER -

ID: 4148104