GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

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Original languageEnglish
Pages (from-to)631-636
Number of pages6
JournalJournal of Crystal Growth
Volume234
Issue number4
Publication statusPublished - Feb 2002
MoE publication typeA1 Journal article-refereed

    Research areas

  • semiconductors, synchrotron X-ray topography

ID: 4148104