GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange

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Original languageEnglish
Pages (from-to)6232-6235
Number of pages4
JournalApplied Surface Science
Volume253
Issue number14
Publication statusPublished - 15 May 2007
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaAs, MOVPE, quantum wells, surface passivation

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