GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange

Abuduwayiti Aierken, Juha Riikonen, Marco Mattila, Teppo Hakkarainen, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)6232-6235
    Number of pages4
    JournalApplied Surface Science
    Volume253
    Issue number14
    DOIs
    Publication statusPublished - 15 May 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • GaAs
    • MOVPE
    • quantum wells
    • surface passivation

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