@article{86dc00c0dee44f10af4dc2eeb3bb7038,
title = "GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride",
keywords = "atomic layer deposition, gallium arsenide, photoluminescence, surface passivation, titanium nitride, atomic layer deposition, gallium arsenide, photoluminescence, surface passivation, titanium nitride, atomic layer deposition, gallium arsenide, photoluminescence, surface passivation, titanium nitride",
author = "M. Bosund and P. Mattila and A. Aierken and T. Hakkarainen and H. Koskenvaara and M. Sopanen and V.M. Airaksinen",
year = "2010",
month = oct,
day = "1",
doi = "10.1016/j.apsusc.2010.05.085",
language = "English",
volume = "256",
pages = "7434--7437",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "24",
}