GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V.M. Airaksinen

Research output: Contribution to journalArticleScientificpeer-review

37 Citations (Scopus)
Original languageEnglish
Pages (from-to)7434-7437
Number of pages4
JournalApplied Surface Science
Issue number24
Publication statusPublished - 1 Oct 2010
MoE publication typeA1 Journal article-refereed


  • atomic layer deposition
  • gallium arsenide
  • photoluminescence
  • surface passivation
  • titanium nitride

Cite this