Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, J.Y. Han

Research output: Contribution to journal › Article › Scientific › peer-review

118 Citations (Scopus)

Keywords

@article{b3fb482c4368467d9e32ef5584a20f9c,

title = "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy",

keywords = "positron, positron, positron",

author = "J. Oila and J. Kivioja and V. Ranki and K. Saarinen and D.C. Look and R.J. Molnar and S.S. Park and S.K. Lee and J.Y. Han",

year = "2003",

language = "English",

volume = "82",

journal = "Applied Physics Letters",

issn = "0003-6951",

}

TY - JOUR

T1 - Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

AU - Oila, J.

AU - Kivioja, J.

AU - Ranki, V.

AU - Saarinen, K.

AU - Look, D.C.

AU - Molnar, R.J.

AU - Park, S.S.

AU - Lee, S.K.

AU - Han, J.Y.

PY - 2003

Y1 - 2003

KW - positron

M3 - Article

VL - 82

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -