Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D.C. Look, R.J. Molnar, S.S. Park, S.K. Lee, J.Y. Han

Research output: Contribution to journalArticleScientificpeer-review

118 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume82
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • positron

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