Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • Leibniz Institute for Crystal Growth

Abstract

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

Details

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
Publication statusPublished - 1 Jan 2019
MoE publication typeA4 Article in a conference publication
EventOxide-Based Materials and Devices - San Francisco, United States
Duration: 3 Feb 20197 Feb 2019
Conference number: 10

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10919
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-Based Materials and Devices
CountryUnited States
CitySan Francisco
Period03/02/201907/02/2019

    Research areas

  • Compensation, Defect, Gallium oxide, Positron annihilation spectroscopy, Vacancy

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