Ga vacancies and electrical compensation in β-Ga                         
                        2
                                                 O                         
                        3
                                                  thin films studied with positron annihilation spectroscopy

Filip Tuomisto; Antti Karjalainen; Vera Prozheeva; Ilja Makkonen; Gunter Wagner; Michele Baldini

doi:10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini

Department of Applied Physics

Leibniz Institute for Crystal Growth

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

12 Citations (Scopus)

371 Downloads (Pure)

Abstract

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga ₂ O ₃ homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga ₂ O ₃ .

Original language	English
Title of host publication	Oxide-Based Materials and Devices X
Editors	David J. Rogers, Ferechteh H. Teherani, David C. Look
Publisher	SPIE
Pages	1-8
ISBN (Electronic)	9781510624801
DOIs	https://doi.org/10.1117/12.2518888
Publication status	Published - 1 Jan 2019
MoE publication type	A4 Conference publication
Event	Oxide-Based Materials and Devices - San Francisco, United States Duration: 3 Feb 2019 → 7 Feb 2019 Conference number: 10

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	10919
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices
Country/Territory	United States
City	San Francisco
Period	03/02/2019 → 07/02/2019

Keywords

Compensation
Defect
Gallium oxide
Positron annihilation spectroscopy
Vacancy

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10.1117/12.2518888

1091910Final published version, 581 KB

Cite this

Tuomisto, F., Karjalainen, A., Prozheeva, V., Makkonen, I., Wagner, G., & Baldini, M. (2019). Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices X (pp. 1-8). Article 1091910 (Proceedings of SPIE; Vol. 10919). SPIE. https://doi.org/10.1117/12.2518888

Tuomisto, Filip ; Karjalainen, Antti ; Prozheeva, Vera et al. / Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. Oxide-Based Materials and Devices X. editor / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. SPIE, 2019. pp. 1-8 (Proceedings of SPIE).

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title = "Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy",

abstract = " We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 . ",

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Tuomisto, F, Karjalainen, A, Prozheeva, V, Makkonen, I, Wagner, G & Baldini, M 2019, Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices X., 1091910, Proceedings of SPIE, vol. 10919, SPIE, pp. 1-8, Oxide-Based Materials and Devices, San Francisco, California, United States, 03/02/2019. https://doi.org/10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. / Tuomisto, Filip; Karjalainen, Antti; Prozheeva, Vera et al.
Oxide-Based Materials and Devices X. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2019. p. 1-8 1091910 (Proceedings of SPIE; Vol. 10919).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

AU - Tuomisto, Filip

AU - Karjalainen, Antti

AU - Prozheeva, Vera

AU - Makkonen, Ilja

AU - Wagner, Gunter

AU - Baldini, Michele

N1 - Conference code: 10

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

AB - We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

KW - Compensation

KW - Defect

KW - Gallium oxide

KW - Positron annihilation spectroscopy

KW - Vacancy

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SP - 1

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BT - Oxide-Based Materials and Devices X

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

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Y2 - 3 February 2019 through 7 February 2019

ER -

Tuomisto F, Karjalainen A, Prozheeva V, Makkonen I, Wagner G, Baldini M. Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy. In Rogers DJ, Teherani FH, Look DC, editors, Oxide-Based Materials and Devices X. SPIE. 2019. p. 1-8. 1091910. (Proceedings of SPIE). doi: 10.1117/12.2518888

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy

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Large-scale electronic structure techniques for advanced materials characterization

Large-scale electronic structure techniques for advanced materials characterization

Large-scale electronic structure techniques for advanced materials characterization

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Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Abstract

Publication series

Conference

Keywords

Access to Document

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Large-scale electronic structure techniques for advanced materials characterization

Large-scale electronic structure techniques for advanced materials characterization

Large-scale electronic structure techniques for advanced materials characterization

Cite this

Ga vacancies and electrical compensation in β-Ga ₂ O ₃ thin films studied with positron annihilation spectroscopy