Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

134 Downloads (Pure)

Abstract

We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped β-Ga 2 O 3 homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (ntype) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in β-Ga 2 O 3 .

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
Pages1-8
ISBN (Electronic)9781510624801
DOIs
Publication statusPublished - 1 Jan 2019
MoE publication typeA4 Article in a conference publication
EventOxide-Based Materials and Devices - San Francisco, United States
Duration: 3 Feb 20197 Feb 2019
Conference number: 10

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10919
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-Based Materials and Devices
CountryUnited States
CitySan Francisco
Period03/02/201907/02/2019

Keywords

  • Compensation
  • Defect
  • Gallium oxide
  • Positron annihilation spectroscopy
  • Vacancy

Fingerprint Dive into the research topics of 'Ga vacancies and electrical compensation in β-Ga <sub>2</sub> O <sub>3</sub> thin films studied with positron annihilation spectroscopy'. Together they form a unique fingerprint.

  • Projects

    Large-scale electronic structure techniques for advanced materials characterization

    Simula, K. & Makkonen, I.

    01/09/201808/11/2019

    Project: Academy of Finland: Other research funding

    Large-scale electronic structure techniques for advanced materials characterization

    Makkonen, I.

    01/09/201522/09/2019

    Project: Academy of Finland: Other research funding

    Large-scale electronic structure techniques for advanced materials characterization

    Makkonen, I., Simula, K. & Prozheeva, V.

    01/09/201521/09/2018

    Project: Academy of Finland: Other research funding

    Cite this

    Tuomisto, F., Karjalainen, A., Prozheeva, V., Makkonen, I., Wagner, G., & Baldini, M. (2019). Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopy. In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices X (pp. 1-8). [1091910] (Proceedings of SPIE; Vol. 10919). https://doi.org/10.1117/12.2518888