Full-Duplex Wireless Transceiver Self-Interference Cancellation Through FD-SOI Buried-Gate Signaling

F. U. Haq, M. Englund, Y. Antonov, K. Stadius, M. Kosunen, J. Ryynänen, K. B. Östman, K. Koli

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Abstract

Full-Duplex (FD) transceiver architectures have recently gained increased attention due to their potential for doubling the theoretical spectral efficiency. One of the main challenges in FD transceivers is the self-interference (SI) from the local transmitter (TX). In this paper we present a novel analog SI cancellation technique through buried-gate signaling in the fully-depleted silicon-on-insulator (FD-SOI) process. The proposed technique attenuates the TX leakage in the receiver (RX) chain before gain is applied. This relaxes the dynamic range requirement of the later RX stages by the amount of attenuation offered by the buried-gate signaling. Further, in comparison to other published analog techniques, the proposed technique offers no penalty on RX noise figure. Measured results in a 28nm FD-SOI technology demonstrate 40–50dB of SI cancellation for TX leakage as high as −10dBm, and above 20dB for TX leakage of −5dBm, with no increase in the RX noise figure.
Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems (ISCAS)
PublisherIEEE
Pages1-5
Number of pages5
ISBN (Electronic)978-1-5386-4881-0
DOIs
Publication statusPublished - 2018
MoE publication typeA4 Article in a conference publication
EventIEEE International Symposium on Circuits and Systems - Florence, Italy
Duration: 27 May 201830 May 2018
http://www.iscas2018.org/

Publication series

NameIEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS PROCEEDINGS
ISSN (Print)0271-4302
ISSN (Electronic)2158-1525

Conference

ConferenceIEEE International Symposium on Circuits and Systems
Abbreviated titleISCAS
CountryItaly
CityFlorence
Period27/05/201830/05/2018
Internet address

Keywords

  • Attenuation
  • Frequency measurement
  • Logic gates
  • Noise measurement
  • Silicon
  • Transceivers
  • Transistors

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