Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Serguei Novikov; Juha Sinkkonen; T. Nikitin; L. Khriachtchev; Eero Haimi; M. Raisanen

Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Serguei Novikov, Juha Sinkkonen, T. Nikitin, L. Khriachtchev, Eero Haimi, M. Raisanen

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	518-522
Journal	Microelectronics Journal
Volume	39
Issue number	3-4
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

Cite this

@article{97edcbc45bb54436b0edd01c6f23ce4f,

title = "Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy",

abstract = "Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.",

author = "Serguei Novikov and Juha Sinkkonen and T. Nikitin and L. Khriachtchev and Eero Haimi and M. Raisanen",

year = "2008",

language = "English",

volume = "39",

pages = "518--522",

journal = "Microelectronics Journal",

issn = "0959-8324",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

AU - Novikov, Serguei

AU - Sinkkonen, Juha

AU - Nikitin, T.

AU - Khriachtchev, L.

AU - Haimi, Eero

AU - Raisanen, M.

PY - 2008

Y1 - 2008

N2 - Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

AB - Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.

M3 - Article

SN - 0959-8324

VL - 39

SP - 518

EP - 522

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3-4

ER -

Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Abstract

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