Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

Serguei Novikov, Juha Sinkkonen, T. Nikitin, L. Khriachtchev, Eero Haimi, M. Raisanen

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. (C) 2007 Elsevier Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)518-522
    JournalMicroelectronics Journal
    Volume39
    Issue number3-4
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

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