Fracture Behavior of Nanoscale Notched Silicon Beams Investigated by the Theory of Critical Distances

Research output: Contribution to journalArticle

Standard

Fracture Behavior of Nanoscale Notched Silicon Beams Investigated by the Theory of Critical Distances. / Gallo, Pasquale; Yan, Yabin; Sumigawa, Takashi; Kitamura, Takayuki.

In: Advanced theory and simulations, Vol. 1, No. 1, 1700006, 01.2018.

Research output: Contribution to journalArticle

Harvard

APA

Vancouver

Author

Bibtex - Download

@article{4827c25f4a8f4aecbadf5dc7cac8e0dd,
title = "Fracture Behavior of Nanoscale Notched Silicon Beams Investigated by the Theory of Critical Distances",
abstract = "This paper investigates the nanoscale fracture behavior of silicon using the Theory of Critical Distances (TCD) and demonstrates that TCD can correctly estimate the magnitude of the breakdown of continuum fracture mechanics. Moreover, it proposes the TCD as an alternative strategy for the determination of fracture toughness, KIC, at the nanoscale. More specifically, in situ micromechanical testing of notched nano‐cantilever beams has been carried out in a transmission electron microscope. The material characteristic length and fracture toughness are then evaluated. The average KIC value obtained is 0.98 MPa m0.5, which is in agreement with that reported in the literature for macro‐Si. The characteristic length L is in the range of 1.3–1.9 nm. It is found that within an atomistic interpretation of the fracture of silicon, these values are in agreement with the breakdown of continuum fracture mechanics.",
keywords = "Fracture toughness, theory of critical distances, single crystal silicon, nanoscale, Notch",
author = "Pasquale Gallo and Yabin Yan and Takashi Sumigawa and Takayuki Kitamura",
year = "2018",
month = "1",
doi = "10.1002/adts.201700006",
language = "English",
volume = "1",
journal = "Advanced theory and simulations",
issn = "2513-0390",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Fracture Behavior of Nanoscale Notched Silicon Beams Investigated by the Theory of Critical Distances

AU - Gallo, Pasquale

AU - Yan, Yabin

AU - Sumigawa, Takashi

AU - Kitamura, Takayuki

PY - 2018/1

Y1 - 2018/1

N2 - This paper investigates the nanoscale fracture behavior of silicon using the Theory of Critical Distances (TCD) and demonstrates that TCD can correctly estimate the magnitude of the breakdown of continuum fracture mechanics. Moreover, it proposes the TCD as an alternative strategy for the determination of fracture toughness, KIC, at the nanoscale. More specifically, in situ micromechanical testing of notched nano‐cantilever beams has been carried out in a transmission electron microscope. The material characteristic length and fracture toughness are then evaluated. The average KIC value obtained is 0.98 MPa m0.5, which is in agreement with that reported in the literature for macro‐Si. The characteristic length L is in the range of 1.3–1.9 nm. It is found that within an atomistic interpretation of the fracture of silicon, these values are in agreement with the breakdown of continuum fracture mechanics.

AB - This paper investigates the nanoscale fracture behavior of silicon using the Theory of Critical Distances (TCD) and demonstrates that TCD can correctly estimate the magnitude of the breakdown of continuum fracture mechanics. Moreover, it proposes the TCD as an alternative strategy for the determination of fracture toughness, KIC, at the nanoscale. More specifically, in situ micromechanical testing of notched nano‐cantilever beams has been carried out in a transmission electron microscope. The material characteristic length and fracture toughness are then evaluated. The average KIC value obtained is 0.98 MPa m0.5, which is in agreement with that reported in the literature for macro‐Si. The characteristic length L is in the range of 1.3–1.9 nm. It is found that within an atomistic interpretation of the fracture of silicon, these values are in agreement with the breakdown of continuum fracture mechanics.

KW - Fracture toughness

KW - theory of critical distances

KW - single crystal silicon

KW - nanoscale

KW - Notch

U2 - 10.1002/adts.201700006

DO - 10.1002/adts.201700006

M3 - Article

VL - 1

JO - Advanced theory and simulations

JF - Advanced theory and simulations

SN - 2513-0390

IS - 1

M1 - 1700006

ER -

ID: 32946940