Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Instituto Politecnico Nacional

Details

Original languageEnglish
Pages (from-to)45-54
Number of pages10
JournalJOURNAL OF NANO RESEARCH
Volume12
Publication statusPublished - Dec 2010
MoE publication typeA1 Journal article-refereed

    Research areas

  • capacitance voltage, coplanar geometry, distributed network, GaAs, schottky contact

ID: 875742