Formation of vacancy-impurity complexes in highly As and P doped Si

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • V. Ranki
  • K. Saarinen

Research units

Details

Original languageEnglish
Pages (from-to)765-768
JournalPhysica B
Volume340-342
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

    Research areas

  • compensation, defect, silicon, vacancy

ID: 3411849