Formation of vacancy-impurity complexes in highly As and P doped Si

V. Ranki, K. Saarinen

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)765-768
JournalPhysica B
Volume340-342
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • compensation
  • defect
  • silicon
  • vacancy

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