Formation of vacancy-impurity complexes in highly As and P doped Si

V. Ranki, K. Saarinen

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Original language	English
Pages (from-to)	765-768
Journal	Physica B
Volume	340-342
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

compensation
defect
silicon
vacancy

Cite this

@article{7d5747d11ea74ea8a53153b1d29d96fd,

title = "Formation of vacancy-impurity complexes in highly As and P doped Si",

keywords = "compensation, defect, silicon, vacancy, compensation, defect, silicon, vacancy, compensation, defect, silicon, vacancy",

author = "V. Ranki and K. Saarinen",

year = "2003",

language = "English",

volume = "340-342",

pages = "765--768",

journal = "Physica B",

}

TY - JOUR

T1 - Formation of vacancy-impurity complexes in highly As and P doped Si

AU - Ranki, V.

AU - Saarinen, K.

PY - 2003

Y1 - 2003

KW - compensation

KW - defect

KW - silicon

KW - vacancy

KW - compensation

KW - defect

KW - silicon

KW - vacancy

KW - compensation

KW - defect

KW - silicon

KW - vacancy

M3 - Article

VL - 340-342

SP - 765

EP - 768

JO - Physica B

JF - Physica B

ER -