Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si

V. Ranki, J. Nissilä, K. Saarinen

Research output: Contribution to journalArticleScientificpeer-review

58 Citations (Scopus)
Original languageEnglish
JournalPhysical Review Letters
Volume88
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Keywords

  • compensation
  • defect
  • positron
  • silicon

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