Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

Ville Ranki, Antti Pelli, Kimmo Saarinen

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)
Original languageEnglish
Pages (from-to)115205
JournalPhysical Review B
Volume69
Issue number11
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Keywords

  • compensation
  • defect
  • Silicon
  • Vacancy

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