Formation of Ohmic Contacts to n-GaAs using (NH(4))2S Surface Passivation

V. Fischer, P-H. Holloway, E.O. Ristolainen, D. Schoenfeld

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)1419-1421
    JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
    Issue number3
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed


    • GaAs alloy
    • ohmic contact
    • SIMS
    • surface passivation

    Cite this