Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

Z. Xia, E. Ristolainen, S. Eränen, H. Ronkainen, R. Elliman, M. Sopanen, T. Tuomi

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages25
    Publication statusPublished - 1994
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameVTT electronics Internal Report
    PublisherVTT

    Keywords

    • ion implantation, silicon-germanium

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