Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

Mikhail Erdmanis; Ilkka Tittonen

doi:10.1063/1.4866586

Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

Mikhail Erdmanis
, Ilkka Tittonen

Ilkka Tittonen Group

Research output: Contribution to journal › Article › Scientific › peer-review

26 Citations (Scopus)

306 Downloads (Pure)

Original language	English
Pages (from-to)	1-5
Journal	Applied Physics Letters
Volume	104
Issue number	073118
DOIs	https://doi.org/10.1063/1.4866586
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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10.1063/1.4866586

1.4866586Final published version, 1.36 MB

Cite this

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title = "Focused ion beam high resolution grayscale lithography for silicon-based nanostructures",

author = "Mikhail Erdmanis and Ilkka Tittonen",

year = "2014",

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pages = "1--5",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "073118",

}

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T1 - Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

AU - Erdmanis, Mikhail

AU - Tittonen, Ilkka

PY - 2014

Y1 - 2014

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U2 - 10.1063/1.4866586

DO - 10.1063/1.4866586

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 073118

ER -

Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

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Focused ion beam high resolution grayscale lithography for silicon-based nanostructures

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