Fluence, flux and implantation temperature dependence of ion implantation induced defect production in 4H-SiC

Jonatan Slotte, M.S. Janson, Kimmo Saarinen, A.Yu. Kuznetsov, A. Hallén, J. Wong-Leung, C. Jagadish, B.G. Svensson

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)
Original languageEnglish
Pages (from-to)033513-033513-7
JournalJournal of Applied Physics
Volume97
Issue number3
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Keywords

  • implantation
  • interstitial
  • vacancy

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