Abstract
Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100-250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.
Original language | English |
---|---|
Article number | 10208246 |
Pages (from-to) | 1716-1719 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 44 |
Issue number | 10 |
Early online date | 2023 |
DOIs | |
Publication status | Published - 1 Oct 2023 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Heterojunction bipolar transistors
- Switches
- Gallium arsenide
- System-on-chip
- Switching circuits
- Plasmas
- Mirrors
Fingerprint
Dive into the research topics of 'Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source'. Together they form a unique fingerprint.Equipment
-
Aalto Electronics-ICT
Ryynänen, J. (Manager)
Department of Electronics and NanoengineeringFacility/equipment: Facility