Fivefold Peak Power Boost in HBT-driven GaAs Collapsing-Field-Domain-Based Sub-THz Source

Maxim Masyukov, Sergey Vainshtein, Roman Grigorev, Zachary Taylor

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Miniature on-chip sources based on the collapsing field domain phenomenon in GaAs have advanced compact sub-picosecond time-domain imaging schemes operating in the 100-250 GHz frequency range. Efforts have been done to broaden the emission band of on-chip sources towards 400 GHz, but increasing the peak power of the emitted picosecond-range pulses remains physically challenging but practically important. In this work, a fivefold increase in peak power has been achieved by replacing the previously used hetero-bipolar-based collapsing field domain source operating in self-oscillating mode with a bipolar-based source externally pulsed by a hetero-bipolar driver. Importantly, the suggested solution unaffected the compactness of the source and facilitates its application in time domain imaging.
Original languageEnglish
Article number10208246
Pages (from-to)1716-1719
Number of pages4
JournalIEEE Electron Device Letters
Volume44
Issue number10
Early online date2023
DOIs
Publication statusPublished - 1 Oct 2023
MoE publication typeA1 Journal article-refereed

Keywords

  • Heterojunction bipolar transistors
  • Switches
  • Gallium arsenide
  • System-on-chip
  • Switching circuits
  • Plasmas
  • Mirrors

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