First-principles calculations of interstitial boron in silicon

M. Hakala, M.J. Puska, R.M. Nieminen

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Abstract

We perform first-principles total-energy calculations to identify the stable and metastable configurations of interstitial B in Si. We calculate formation energies and ionization levels for several equilibrium ionic configurations in different possible charge states. In all charge states the ground state consists of a B atom close to a substitutional site and a Si self-interstitial nearby. The binding energy of the self-interstitial to the substitutional B is, however, rather weak, of the order of 0.2–0.3 eV. The ground state has negative-U properties in accordance with experiments. We find several charge-state-dependent metastable configurations of interstitial B energetically close to the ground state. We discuss on the basis of formation energies the role of excess Si interstitials in the activation of B diffusion and the charge-assisted transport mechanism in the activation of B diffusion.
Original languageEnglish
Pages (from-to)8155-8161
Number of pages7
JournalPhysical Review B
Volume61
Issue number12
DOIs
Publication statusPublished - 15 Mar 2000
MoE publication typeA1 Journal article-refereed

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