Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine; Ville Vähänissi; Zhengjun Liu; Haibing Huang; Ernesto Magana; Ashley E. Morishige; Nabil Khelifati; Sebastian Husein; Barry Lai; Mariana Bertoni; Djoudi Bouhafs; Tonio Buonassisi; David P. Fenning; Hele Savin

doi:10.1109/PVSC.2016.7749686

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine, Ville Vähänissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, Sebastian Husein, Barry Lai, Mariana Bertoni, Djoudi Bouhafs, Tonio Buonassisi, David P. Fenning, Hele Savin

Electron Physics Group (EPG)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

Original language	English
Title of host publication	Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC)
Publisher	IEEE
Pages	678-680
Number of pages	3
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749686
Publication status	Published - 18 Nov 2016
MoE publication type	A4 Conference publication
Event	IEEE Photovoltaic Specialists Conference - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 Conference number: 43

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	United States
City	Portland
Period	05/06/2016 → 10/06/2016

Access to Document

10.1109/PVSC.2016.7749686

Cite this

Laine, H. S., Vähänissi, V., Liu, Z., Huang, H., Magana, E., Morishige, A. E., Khelifati, N., Husein, S., Lai, B., Bertoni, M., Bouhafs, D., Buonassisi, T., Fenning, D. P., & Savin, H. (2016). Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. In Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC) (pp. 678-680). Article 7749686 IEEE. https://doi.org/10.1109/PVSC.2016.7749686

@inproceedings{a363fde7406a42c8a18aa83f90deb375,

title = "Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering",

abstract = "Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.",

author = "Laine, {Hannu S.} and Ville V{\"a}h{\"a}nissi and Zhengjun Liu and Haibing Huang and Ernesto Magana and Morishige, {Ashley E.} and Nabil Khelifati and Sebastian Husein and Barry Lai and Mariana Bertoni and Djoudi Bouhafs and Tonio Buonassisi and Fenning, {David P.} and Hele Savin",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749686",

language = "English",

pages = "678--680",

booktitle = "Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 05-06-2016 Through 10-06-2016",

}

Laine, HS, Vähänissi, V, Liu, Z, Huang, H, Magana, E, Morishige, AE, Khelifati, N, Husein, S, Lai, B, Bertoni, M, Bouhafs, D, Buonassisi, T, Fenning, DP & Savin, H 2016, Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. in Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC)., 7749686, IEEE, pp. 678-680, IEEE Photovoltaic Specialists Conference, Portland, Oregon, United States, 05/06/2016. https://doi.org/10.1109/PVSC.2016.7749686

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. / Laine, Hannu S.; Vähänissi, Ville; Liu, Zhengjun et al.
Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2016. p. 678-680 7749686.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Finite- vs. infinite-source emitters in silicon photovoltaics

T2 - IEEE Photovoltaic Specialists Conference

AU - Laine, Hannu S.

AU - Vähänissi, Ville

AU - Liu, Zhengjun

AU - Huang, Haibing

AU - Magana, Ernesto

AU - Morishige, Ashley E.

AU - Khelifati, Nabil

AU - Husein, Sebastian

AU - Lai, Barry

AU - Bertoni, Mariana

AU - Bouhafs, Djoudi

AU - Buonassisi, Tonio

AU - Fenning, David P.

AU - Savin, Hele

N1 - Conference code: 43

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

AB - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

UR - http://www.scopus.com/inward/record.url?scp=85003587647&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2016.7749686

DO - 10.1109/PVSC.2016.7749686

M3 - Conference article in proceedings

AN - SCOPUS:85003587647

SP - 678

EP - 680

BT - Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC)

PB - IEEE

Y2 - 5 June 2016 through 10 June 2016

ER -

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Abstract

Conference

Access to Document

Other files and links

Fingerprint

OtaNano - Nanofab

Cite this

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Equipment

OtaNano - Nanofab

Cite this