Abstract
Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
Original language | English |
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Title of host publication | Proceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC) |
Publisher | IEEE |
Pages | 678-680 |
Number of pages | 3 |
ISBN (Electronic) | 9781509027248 |
DOIs | |
Publication status | Published - 18 Nov 2016 |
MoE publication type | A4 Conference publication |
Event | IEEE Photovoltaic Specialists Conference - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 Conference number: 43 |
Conference
Conference | IEEE Photovoltaic Specialists Conference |
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Abbreviated title | PVSC |
Country/Territory | United States |
City | Portland |
Period | 05/06/2016 → 10/06/2016 |