Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine, Ville Vähänissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, Sebastian Husein, Barry Lai, Mariana Bertoni, Djoudi Bouhafs, Tonio Buonassisi, David P. Fenning, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

Original languageEnglish
Title of host publicationProceedings of the 43rd IEEE Photovoltaic Specialists Conference (PVSC)
PublisherIEEE
Pages678-680
Number of pages3
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 18 Nov 2016
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Portland, United States
Duration: 5 Jun 201610 Jun 2016
Conference number: 43

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
Country/TerritoryUnited States
CityPortland
Period05/06/201610/06/2016

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