Fingle-electron transistor made of a multiwalled carbon nanotube using AFM manipulation

L. Roschier, M. Martin, J. Penttilä, R. Tarkiainen, U. Tapper, C. Journet, E.I. Kauppinen, P. Hakonen, M. Paalanen

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages41
    Publication statusPublished - 2000
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameThe XXXIV Annual Conference of the Finnish Physical Society, Espoo, Finland, March 9-11, 2000
    PublisherHelsinki University of Technology, Department of Engineering Physics and Mathematics

    Keywords

    • carbon nanotube
    • single-electron transistor

    Cite this

    Roschier, L., Martin, M., Penttilä, J., Tarkiainen, R., Tapper, U., Journet, C., Kauppinen, E. I., Hakonen, P., & Paalanen, M. (2000). Fingle-electron transistor made of a multiwalled carbon nanotube using AFM manipulation. (pp. 41). (The XXXIV Annual Conference of the Finnish Physical Society, Espoo, Finland, March 9-11, 2000).