Field-effect transistor based on surface negative refraction in Weyl nanowire

Research output: Contribution to journalArticle

Researchers

Research units

  • ETH Zurich
  • Nanjing University
  • Nanjing University of Aeronautics and Astronautics

Abstract

Weyl semimetals are characterized by their bulk Weyl points—conical band touching points that carry a topological monopole charge—and Fermi arc states that span between the Weyl points on the surface of the material. Recently, significant progress has been made toward the understanding and measurement of the physical properties of Weyl semimetals. Yet, potential applications remain relatively sparse. Here we propose Weyl semimetal nanowires as field-effect transistors, dubbed WEYLFETs. Specifically, applying gradient gate voltage along the nanowire, an electric field is generated, which effectively tilts the open surfaces, thus, varying the relative orientation between Fermi arcs on different surfaces. As a result, perfect negative refraction between adjacent surfaces can occur and longitudinal conductance along the wire is suppressed. The WEYLFET offers a high on/off ratio with low power consumption. Adverse effects due to dispersive Fermi arcs and surface disorder are studied.

Details

Original languageEnglish
Article number011102
Pages (from-to)1-6
Number of pages6
JournalAPL Materials
Volume8
Issue number1
Publication statusPublished - 2020
MoE publication typeA1 Journal article-refereed

ID: 40239571