Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

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Researchers

Research units

  • RAS - Ioffe Physico Technical Institute
  • Russian Academy of Sciences
  • Max Planck Institute of Microstructure Physics

Abstract

(Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.

Details

Original languageEnglish
Article number144303
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Volume113
Issue number14
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

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