Ferroelectric parallel-plate capacitors with copper electrodes for high-frequency applications

Tommi Riekkinen*, Tomi Mattila, Sebastiaan van Dijken, A. Lüker, Qi Zhang, Paul B. Kirby, Ana M. Sánchez

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

Tunable capacitors with a Cu Pbx Sr1-x Ti O3 Cu parallel-plate structure have been fabricated using a layer transfer method. The use of a Cu bottom electrode results in a giant electrode Q-factor×capacitor area product of Qelec A=3.79× 105 μ m2 at 1 GHz. The dielectric constant at room temperature is 420 and the tunability amounts to 73% near a breakdown voltage of 35 V. The major advantages of the layer transfer method include low electrode losses, the freedom to select an auxiliary substrate and seed layer for ferroelectric film growth irrespective of their high-frequency properties, and the possibility to utilize a large variety of device substrates as they no longer act as template for film growth.

Original languageEnglish
Article number252902
Number of pages3
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

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