FEA based Model for high-frequency design optimization of a three-winding coupled inductor for HSU converters

Bilal Ahmad, Prasad Jayathurathnage, Jorma Kyyra, Wilmar Martinez

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Inductors for power electronic converters resonate at a self-resonance frequency due to the presence of parasitic capacitances. Beyond the resonance frequency, inductor impedance demonstrates capacitive nature and hence it will provide a low impedance path to high-frequency noise components. In this paper, self-resonance frequency of the inductor for a High Step-Up (HSU) converter has been evaluated by the application of Finite Element Analysis (FEA) models. Simulations are performed under different design scenarios to optimize the inductor for high-frequency performance. Results showed that the self-resonance frequency is increased by the size of core and decreasing the number of turns. However, the power density of the converter puts a maximum limit on the size of the core. In addition, this study provides an approach to optimize the gain of the converter as results showed that the inductor design for higher voltage gain has a lower self-resonance frequency.

Original languageEnglish
Title of host publicationProceedings of the 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
PublisherIEEE
Number of pages10
ISBN (Electronic)9789075815313
DOIs
Publication statusPublished - 1 Sept 2019
MoE publication typeA4 Conference publication
EventEuropean Conference on Power Electronics and Applications - Genova, Italy
Duration: 2 Sept 20196 Sept 2019
Conference number: 21

Publication series

NameEuropean Conference on Power Electronics and Applications
PublisherIEEE
ISSN (Print)2325-0313

Conference

ConferenceEuropean Conference on Power Electronics and Applications
Abbreviated titleEPE-ECCE Europe
Country/TerritoryItaly
CityGenova
Period02/09/201906/09/2019

Keywords

  • EMC/EMI
  • Emerging Topology
  • Gallium Nitride (GaN)
  • Harmonics
  • Power Quality

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