Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


  • V. N. Trukhin
  • A. D. Bouravleuv
  • I. A. Mustafin
  • A. I. Eliseev
  • G. E. Cirlin
  • J. P. Kakko
  • H. Lipsanen

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • RAS - St. Petersburg Academic University


The experimental results on the effect of an electron-hole plasma on the THz generation in GaAs NWs grown by MOVPE are presented. It is shown that the dynamics of photoexcited charge carriers in nanowires is determined by the transport of charge carriers - electrons and holes and by the capture time of electrons and holes onto the surface levels. The dependence of initial fall time of THz emission on the intensity of the pump can be accounted for by a theory based on majority-carrier flow. The characteristics time obtained can be used to determine the momentum relaxation time of the electrons.


Original languageEnglish
Title of host publication2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Publication statusPublished - 12 Oct 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Infrared, Millimeter, and Terahertz Waves - Cancun, Mexico
Duration: 27 Aug 20171 Sep 2017
Conference number: 42

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035


ConferenceInternational Conference on Infrared, Millimeter, and Terahertz Waves
Abbreviated titleIRMMW-THz

ID: 16401314