Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires

V. N. Trukhin; A. D. Bouravleuv; I. A. Mustafin; A. I. Eliseev; G. E. Cirlin; J. P. Kakko; H. Lipsanen

doi:10.1109/IRMMW-THz.2017.8067225

Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires

V. N. Trukhin, A. D. Bouravleuv, I. A. Mustafin, A. I. Eliseev, G. E. Cirlin, J. P. Kakko, H. Lipsanen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

The experimental results on the effect of an electron-hole plasma on the THz generation in GaAs NWs grown by MOVPE are presented. It is shown that the dynamics of photoexcited charge carriers in nanowires is determined by the transport of charge carriers - electrons and holes and by the capture time of electrons and holes onto the surface levels. The dependence of initial fall time of THz emission on the intensity of the pump can be accounted for by a theory based on majority-carrier flow. The characteristics time obtained can be used to determine the momentum relaxation time of the electrons.

Original language	English
Title of host publication	2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Publisher	IEEE
Number of pages	2
ISBN (Electronic)	9781509060481
DOIs	https://doi.org/10.1109/IRMMW-THz.2017.8067225
Publication status	Published - 12 Oct 2017
MoE publication type	A4 Article in a conference publication
Event	International Conference on Infrared, Millimeter, and Terahertz Waves - Cancun, Mexico Duration: 27 Aug 2017 → 1 Sep 2017 Conference number: 42

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	International Conference on Infrared, Millimeter, and Terahertz Waves
Abbreviated title	IRMMW-THz
Country/Territory	Mexico
City	Cancun
Period	27/08/2017 → 01/09/2017

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Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Eliseev, A. I., Cirlin, G. E., Kakko, J. P., & Lipsanen, H. (2017). Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 [8067225] (International Conference on Infrared, Millimeter, and Terahertz Waves). IEEE. https://doi.org/10.1109/IRMMW-THz.2017.8067225

Trukhin, V. N. ; Bouravleuv, A. D. ; Mustafin, I. A. ; Eliseev, A. I. ; Cirlin, G. E. ; Kakko, J. P. ; Lipsanen, H. / Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires. 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE, 2017. (International Conference on Infrared, Millimeter, and Terahertz Waves).

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abstract = "The experimental results on the effect of an electron-hole plasma on the THz generation in GaAs NWs grown by MOVPE are presented. It is shown that the dynamics of photoexcited charge carriers in nanowires is determined by the transport of charge carriers - electrons and holes and by the capture time of electrons and holes onto the surface levels. The dependence of initial fall time of THz emission on the intensity of the pump can be accounted for by a theory based on majority-carrier flow. The characteristics time obtained can be used to determine the momentum relaxation time of the electrons.",

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Trukhin, VN, Bouravleuv, AD, Mustafin, IA, Eliseev, AI, Cirlin, GE, Kakko, JP & Lipsanen, H 2017, Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires. in 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017., 8067225, International Conference on Infrared, Millimeter, and Terahertz Waves, IEEE, International Conference on Infrared, Millimeter, and Terahertz Waves, Cancun, Mexico, 27/08/2017. https://doi.org/10.1109/IRMMW-THz.2017.8067225

Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires. / Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Eliseev, A. I.; Cirlin, G. E.; Kakko, J. P.; Lipsanen, H.

2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE, 2017. 8067225 (International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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T1 - Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires

AU - Trukhin, V. N.

AU - Bouravleuv, A. D.

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AU - Cirlin, G. E.

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N2 - The experimental results on the effect of an electron-hole plasma on the THz generation in GaAs NWs grown by MOVPE are presented. It is shown that the dynamics of photoexcited charge carriers in nanowires is determined by the transport of charge carriers - electrons and holes and by the capture time of electrons and holes onto the surface levels. The dependence of initial fall time of THz emission on the intensity of the pump can be accounted for by a theory based on majority-carrier flow. The characteristics time obtained can be used to determine the momentum relaxation time of the electrons.

AB - The experimental results on the effect of an electron-hole plasma on the THz generation in GaAs NWs grown by MOVPE are presented. It is shown that the dynamics of photoexcited charge carriers in nanowires is determined by the transport of charge carriers - electrons and holes and by the capture time of electrons and holes onto the surface levels. The dependence of initial fall time of THz emission on the intensity of the pump can be accounted for by a theory based on majority-carrier flow. The characteristics time obtained can be used to determine the momentum relaxation time of the electrons.

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Trukhin VN, Bouravleuv AD, Mustafin IA, Eliseev AI, Cirlin GE, Kakko JP et al. Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires. In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017. IEEE. 2017. 8067225. (International Conference on Infrared, Millimeter, and Terahertz Waves). https://doi.org/10.1109/IRMMW-THz.2017.8067225

Fast dynamics of photoexcited electron-hole plasma in GaAs nanowires

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