Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

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Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes. / Wei, Nan; Laiho, Patrik; Khan, Abu Taher; Hussain, Aqeel; Lyuleeva, Alina; Ahmed, Saeed; Zhang, Qiang; Liao, Yongping; Tian, Ying; Ding, Er Xiong; Ohno, Yutaka; Kauppinen, Esko I.

In: Advanced Functional Materials, 01.01.2019, p. 1-9.

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@article{a735479acd0440d29a8bf774eaefef2d,
title = "Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes",
abstract = "In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean field-effect mobility, which is 3.3 times higher than that of high-quality solution-processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.",
keywords = "bottom contacts, charge carrier mobility, floating-catalyst chemical vapor deposition, nanomaterials, ultraclean carbon nanotube devices",
author = "Nan Wei and Patrik Laiho and Khan, {Abu Taher} and Aqeel Hussain and Alina Lyuleeva and Saeed Ahmed and Qiang Zhang and Yongping Liao and Ying Tian and Ding, {Er Xiong} and Yutaka Ohno and Kauppinen, {Esko I.}",
note = "AVAA TIEDOSTO 12 KK EMBARGOLLA, KUN ILMESTYY VIRALLISESTI",
year = "2019",
month = "1",
day = "1",
doi = "10.1002/adfm.201907150",
language = "English",
pages = "1--9",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "WILEY-VCH VERLAG",

}

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TY - JOUR

T1 - Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

AU - Wei, Nan

AU - Laiho, Patrik

AU - Khan, Abu Taher

AU - Hussain, Aqeel

AU - Lyuleeva, Alina

AU - Ahmed, Saeed

AU - Zhang, Qiang

AU - Liao, Yongping

AU - Tian, Ying

AU - Ding, Er Xiong

AU - Ohno, Yutaka

AU - Kauppinen, Esko I.

N1 - AVAA TIEDOSTO 12 KK EMBARGOLLA, KUN ILMESTYY VIRALLISESTI

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean field-effect mobility, which is 3.3 times higher than that of high-quality solution-processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.

AB - In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean field-effect mobility, which is 3.3 times higher than that of high-quality solution-processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.

KW - bottom contacts

KW - charge carrier mobility

KW - floating-catalyst chemical vapor deposition

KW - nanomaterials

KW - ultraclean carbon nanotube devices

UR - http://www.scopus.com/inward/record.url?scp=85075207347&partnerID=8YFLogxK

U2 - 10.1002/adfm.201907150

DO - 10.1002/adfm.201907150

M3 - Article

SP - 1

EP - 9

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

M1 - 1907150

ER -

ID: 39088753