Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

Nan Wei*, Patrik Laiho, Abu Taher Khan, Aqeel Hussain, Alina Lyuleeva, Saeed Ahmed, Qiang Zhang, Yongping Liao, Ying Tian, Er Xiong Ding, Yutaka Ohno, Esko I. Kauppinen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)
23 Downloads (Pure)


In this work, a fast approach for the fabrication of hundreds of ultraclean field-effect transistors (FETs) is introduced, using single-walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating-catalyst chemical vapor deposition, which is employed to fabricate high-performance thin-film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT-based FETs exhibit a mean field-effect mobility, which is 3.3 times higher than that of high-quality solution-processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT-based FETs shed light on further study of contamination-free SWCNTs on various metal contacts and substrates.

Original languageEnglish
Article number1907150
Pages (from-to)1-9
Number of pages9
JournalAdvanced Functional Materials
Issue number5
Early online date1 Jan 2019
Publication statusPublished - 1 Jan 2020
MoE publication typeA1 Journal article-refereed


  • bottom contacts
  • charge carrier mobility
  • floating-catalyst chemical vapor deposition
  • nanomaterials
  • ultraclean carbon nanotube devices


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