Facet growth of 4He crystals at mK temperatures

J. P. Ruutu*, P. J. Hakonen, A. V. Babkin, A. Ya. Parshin, J. S. Penttilä, J. P. Saramäki, G. Tvalashvili

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Citations (Scopus)
61 Downloads (Pure)

Abstract

We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0-20 cm-2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.

Original languageEnglish
Pages (from-to)4187-4190
Number of pages4
JournalPhysical Review Letters
Volume76
Issue number22
DOIs
Publication statusPublished - 27 May 1996
MoE publication typeA1 Journal article-refereed

Keywords

  • facet
  • interferometry
  • solid 4He

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