Fabrication of thick insulating membrane embedded in Si substrate

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Fabrication of thick insulating membrane embedded in Si substrate. / Ovchinnikov, V.; Liu, Y.

4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. p. 27-32 5437799.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Ovchinnikov, V & Liu, Y 2010, Fabrication of thick insulating membrane embedded in Si substrate. in 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010., 5437799, pp. 27-32, International Conference on Quantum, Nano and Micro Technologies, St. Maarten, 10/02/2010. https://doi.org/10.1109/ICQNM.2010.12

APA

Ovchinnikov, V., & Liu, Y. (2010). Fabrication of thick insulating membrane embedded in Si substrate. In 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 (pp. 27-32). [5437799] https://doi.org/10.1109/ICQNM.2010.12

Vancouver

Ovchinnikov V, Liu Y. Fabrication of thick insulating membrane embedded in Si substrate. In 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. p. 27-32. 5437799 https://doi.org/10.1109/ICQNM.2010.12

Author

Ovchinnikov, V. ; Liu, Y. / Fabrication of thick insulating membrane embedded in Si substrate. 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. pp. 27-32

Bibtex - Download

@inproceedings{257a7f56c9784d069fcd575b091853af,
title = "Fabrication of thick insulating membrane embedded in Si substrate",
abstract = "The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.",
keywords = "ICP-RIE, Plasma etching, Thermal insulation, Thick membrane",
author = "V. Ovchinnikov and Y. Liu",
year = "2010",
doi = "10.1109/ICQNM.2010.12",
language = "English",
isbn = "9780769539522",
pages = "27--32",
booktitle = "4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010",

}

RIS - Download

TY - GEN

T1 - Fabrication of thick insulating membrane embedded in Si substrate

AU - Ovchinnikov, V.

AU - Liu, Y.

PY - 2010

Y1 - 2010

N2 - The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.

AB - The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.

KW - ICP-RIE

KW - Plasma etching

KW - Thermal insulation

KW - Thick membrane

UR - http://www.scopus.com/inward/record.url?scp=77952400138&partnerID=8YFLogxK

U2 - 10.1109/ICQNM.2010.12

DO - 10.1109/ICQNM.2010.12

M3 - Conference contribution

SN - 9780769539522

SP - 27

EP - 32

BT - 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010

ER -

ID: 14466801