Fabrication of thick insulating membrane embedded in Si substrate

V. Ovchinnikov*, Yidong Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


The present paper is devoted to the description of a fabrication process of thick (tens of micrometers) insulating SiO2 membrane embedded in a c-Si substrate. The membrane processing consists of total thermal oxidation of trenches, which were preliminary etched on front side of the substrate, conformal deposition of dielectric layer for SiO2 trenches closing and selective etching of c-Si from back side of the substrate. The proposed process provides high accuracy of membrane thickness control and can be used in monolithic integration of dielectric based passive components with active semiconductor elements. Measurement results demonstrate that thermal insulation similar to that of glass substrate can be reached.

Original languageEnglish
Title of host publication4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
Number of pages6
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Quantum, Nano and Micro Technologies - St. Maarten
Duration: 10 Feb 201016 Feb 2010
Conference number: 4


ConferenceInternational Conference on Quantum, Nano and Micro Technologies
Abbreviated titleICQNM
CitySt. Maarten


  • Plasma etching
  • Thermal insulation
  • Thick membrane


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