Fabrication of sub-100 nm GaAs columns by reactive ion ecthing using Au islands as etching mask

J. Ahopelto, V.-M. Airaksinen, E. Siren, Heidi Niemi

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

A new method for fabrication of reactive ion etching masks for nanoscale GaAs columns is proposed. The mask consists of sub-100 nm Au islands formed by in situ heating a thin gold film on the substrate surface. The resulting areal density of the Au islands can exceed 1010 cm-2. The islands show good resistance against etching, making the method suitable for fabrication of nanoscale structures with very high aspect ratios. This is demonstrated by etching over 1 μm high GaAs and AlGaAs/GaAs columns with widths below 100 nm.
Original languageEnglish
Pages (from-to)161-162
JournalJournal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Volume13
Issue number1
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • GaAs
  • reactive ion etching

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