Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching

Research output: Contribution to journalArticle

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near‐surface quantum well using self‐organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free‐standing GaInAs/GaAs columns, produced by a three‐step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well.

Details

Original languageEnglish
Pages (from-to)4029-4031
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number26
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

    Research areas

  • optoelectronics, semiconductors

Download statistics

No data available

ID: 4945804