Fabrication of a p-i-n Diode with a Nanostructured c-Si/SiO2 i-layer

S. Novikov, J. Sinkkonen, O. Kilpelä

Research output: Working paperProfessional

Original languageEnglish
Publication statusPublished - 1997
MoE publication typeD4 Published development or research report or study

Publication series

NameSixth International Conference on the Formation of Semiconductor Interfaces, Cardiff , Wales, UK, 23-27 June 1997
PublisherWilliams, R.H.

Keywords

  • diode
  • nanostructures
  • p-i-n
  • Si
  • SiO2

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