Fabrication and properties of strained-layer quantum-well lasers for operation at the wavelength of 1.02 my m.

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Original languageEnglish
Place of PublicationJyväskylä
Pages7
Publication statusPublished - 1995
MoE publication typeD4 Published development or research report or study

    Research areas

  • semiconductor lasers, metalorganic vapour phase epitaxy

ID: 5181959