Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Yu. A. Pashkin; J. P. Pekola; L. S.  Kuzmin

doi:10.1116/1.590769

Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Yu. A. Pashkin, J. P. Pekola^*, L. S. Kuzmin

^*Corresponding author for this work

Not published at Aalto University

University of Jyväskylä

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

We fabricated chromium based single-electron transistors comprising small-area Cr/CrO_x/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

Original language	English
Pages (from-to)	1413-1416
Number of pages	4
Journal	Journal of Vacuum Science and Technology. Part B.
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.590769
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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title = "Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions",

abstract = "We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.",

author = "Pashkin, \{Yu. A.\} and Pekola, \{J. P.\} and Kuzmin, \{L. S.\}",

year = "1999",

doi = "10.1116/1.590769",

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pages = "1413--1416",

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AU - Pashkin, Yu. A.

AU - Pekola, J. P.

AU - Kuzmin , L. S.

PY - 1999

Y1 - 1999

N2 - We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

AB - We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

UR - https://www.scopus.com/pages/publications/24644468751

U2 - 10.1116/1.590769

DO - 10.1116/1.590769

M3 - Article

AN - SCOPUS:24644468751

SN - 1071-1023

VL - 17

SP - 1413

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JO - Journal of Vacuum Science and Technology. Part B.

JF - Journal of Vacuum Science and Technology. Part B.

IS - 4

ER -

Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

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