Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Yu. A. Pashkin, J. P. Pekola*, L. S. Kuzmin

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.

Original languageEnglish
Pages (from-to)1413-1416
Number of pages4
JournalJournal of Vacuum Science and Technology. Part B.
Volume17
Issue number4
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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