Extended Defects in Silicon Carbide Single Crystal Material

R. Yakimova; H. Jacobson; N. Vouroutzis; M. Syväjärvi; J. Stoemenos; T. Tuomi; E. Janzén

Extended Defects in Silicon Carbide Single Crystal Material

R. Yakimova
, H. Jacobson
, N. Vouroutzis
, M. Syväjärvi
, J. Stoemenos
, T. Tuomi
, E. Janzén

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	International Conference Extended Defects in Semiconductors, Bologna, Italy, 1-6 June, 2002
Publication status	Published - 2002
MoE publication type	A4 Conference publication

Keywords

semiconductors
synchrotron x-ray topography

Cite this

@inproceedings{ea63afe13f4147ca8dcf4c59f91f8141,

title = "Extended Defects in Silicon Carbide Single Crystal Material",

keywords = "semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography",

author = "R. Yakimova and H. Jacobson and N. Vouroutzis and M. Syv{\"a}j{\"a}rvi and J. Stoemenos and T. Tuomi and E. Janz{\'e}n",

year = "2002",

language = "English",

booktitle = "International Conference Extended Defects in Semiconductors, Bologna, Italy, 1-6 June, 2002",

}

TY - GEN

T1 - Extended Defects in Silicon Carbide Single Crystal Material

AU - Yakimova, R.

AU - Jacobson, H.

AU - Vouroutzis, N.

AU - Syväjärvi, M.

AU - Stoemenos, J.

AU - Tuomi, T.

AU - Janzén, E.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

M3 - Conference article in proceedings

BT - International Conference Extended Defects in Semiconductors, Bologna, Italy, 1-6 June, 2002

ER -