Experimentally Defined Electronic Properties of InGaAsN: Input for Solar Cell Simulations

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, September 5-9, 2011
Pages	621-624
Publication status	Published - 2011
MoE publication type	A4 Conference publication

Cite this

@inproceedings{145ff5a50d8844f39c7236da0f5c4e74,

title = "Experimentally Defined Electronic Properties of InGaAsN: Input for Solar Cell Simulations",

author = "P{\"a}ivikki Repo and Natalia Lebedeva and Hele Savin",

year = "2011",

language = "English",

pages = "621--624",

booktitle = "26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, September 5-9, 2011",

}

Experimentally Defined Electronic Properties of InGaAsN: Input for Solar Cell Simulations. / Repo, Päivikki; Lebedeva, Natalia; Savin, Hele.
26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, September 5-9, 2011. 2011. p. 621-624.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review